Electro-optical apparatus and electronic device

ABSTRACT

There is provided an electro-optical apparatus including an element substrate that includes a display region in which a plurality of pixels, which are light-emitting elements, are arranged in a matrix form. The light-emitting element has a structure in which a reflective electrode, a protective layer, an optical path adjustment layer, a first electrode, a light-emitting layer, and a second electrode are laminated on an insulation layer. The reflective electrode is disposed by being split in each pixel, and a gap is formed between each reflective electrode that is disposed by being split in each pixel. The protective layer covers the surface of the reflective electrode on which the gap is formed, and includes an embedded insulation film which is embedded in the gap.

BACKGROUND

1. Technical Field

The present invention relates to an electro-optical apparatus and anelectronic device.

2. Related Art

An organic electro luminescence (EL) apparatus, in which pixels that usean organic EL element are disposed in a matrix form in a display regionof an element substrate, is proposed as an example of theelectro-optical apparatus (for example, refer to JP-A-2005-321815 andJP-A-2013-089444).

In detail, JP-A-2005-321815 discloses a top emission structure organicEL apparatus that is provided with an organic EL element in which afirst electrode (pixel electrode), a light-emitting layer, and a secondelectrode (counter electrode) are laminated in that order, a powersupply line which is electrically connected to the first electrode, anda switching element (transistor) that switches the electrical connectionof the first electrode and the power supply line, which is disposed suchthat the first electrode is superimposed on the power supply line(reflective layer) which has light reflectivity.

Meanwhile, JP-A-2013-089444 discloses an organic EL apparatus which isprovided with an organic EL element with a resonant structure (cavitystructure) in which a reflective layer, an optical path adjustmentlayer, a first electrode (pixel electrode), a light-emitting layer, anda second electrode (counter electrode) are laminated in that order, andlight is emitted by increasing the strength of light of a specificwavelength (resonant wavelength) according to an optical distancebetween the reflective layer and the second electrode which is adjustedaccording to the optical path adjustment layer while light which isemitted in the light-emitting layer is repeatedly reflected between thereflective layer and the second electrode.

Here, an opening is formed between each reflective electrode that isdisposed in each pixel in the organic EL apparatus which is describedabove in JP-A-2013-089444. The optical path adjustment layer is disposedso as to cover the surface of the reflective electrode on which theopening is formed. For this reason, a concave section (concavities andconvexities) which reflects the shape of the opening is formed in theoptical path adjustment layer.

However, it is difficult to accurately perform optical path adjustmentbetween the reflective electrode and the first electrode using theoptical path adjustment layer at a position where such a concave sectionis formed and in the vicinity thereof. In addition, in order for thefirst electrode which is disposed on the optical path adjustment layerto avoid influence by the concave section, it is necessary to reduce thesize of the reflective electrode. Accordingly, a light-emitting area(pixel aperture ratio) is reduced by the amount by which the firstelectrode is smaller than the reflective electrode.

SUMMARY

An advantage of some aspects of the invention is to provide anelectro-optical apparatus which is able to accurately perform opticalpath adjustment between a reflective electrode and a first electrode,and is able to increase the pixel aperture ratio, and an electronicdevice provided with such an electro-optical apparatus.

An electro-optical apparatus according to an aspect of the inventionincludes an element substrate that includes a display region in which aplurality of pixels are arranged in a matrix form. The element substratehas a light-emitting element and a transistor which drives thelight-emitting element in each pixel. The light-emitting element isdisposed via an insulation layer on the transistor, and has a structurein which a reflective electrode, a protective layer, an optical pathadjustment layer, a first electrode, a light-emitting layer, and asecond electrode are laminated. The reflective electrode is disposed bybeing split in each pixel. A gap is formed between each reflectiveelectrode that is disposed by being split in each pixel. The protectivelayer includes an embedded insulation film which is embedded in the gap.

According to this configuration, since the surface of the protectivelayer on the side which comes in contact with the optical pathadjustment layer is flattened, it is possible to accurately performoptical path adjustment between the reflective electrode and the firstelectrode by adjusting the thickness of the optical path adjustmentlayer in each pixel. Thereby, it is possible to perform a light-emittingoperation for a light-emitting element with good color reproducibilityusing a resonant structure. In addition, according to thisconfiguration, since the optical path adjustment layer which is disposedon the surface of the protective layer is flattened, it is possible toposition an end section of the first electrode which is disposed on thesurface of the optical path adjustment layer close to an end section ofthe reflective electrode. Thereby, it is possible to increase thelight-emitting area (pixel aperture ratio).

In addition, the electro-optical apparatus may have a configuration inwhich the transistor and the reflective electrode are electricallyconnected via a first contact electrode which is disposed so as to passthrough the insulation layer, and the reflective electrode and the firstelectrode are electrically connected via a second contact electrodewhich is disposed so as to pass through the protective layer.

According to this configuration, since the transistor and the firstelectrode are electrically connected via the reflective electrode, thereflective electrode and the first electrode have the same potential.Thereby, it is possible to perform the light-emitting operation of thelight-emitting element with high reliability while controlling thepotential which is applied from the transistor to the first electrodevia the reflective electrode. In addition, according to thisconfiguration, it is possible to achieve a further improvement in yield.

In addition, the electro-optical apparatus may have a configuration inwhich the protective layer includes a first insulation film which isprovided between the reflective electrode and an embedded insulationfilm and a second insulation film which is provided on the firstinsulation film and the embedded insulation film, and the optical pathadjustment layer is disposed such that an end section of at least aportion is positioned on the surface of the second insulation film.

According to this configuration, it is possible for the secondinsulation film to function as an etching stopper for the optical pathadjustment layer while protecting the embedded insulation film whenpatterning is carried out on the optical path adjustment layer in apredetermined shape.

In addition, the electro-optical apparatus may have a configuration inwhich the second insulation film contains silicon nitride and theoptical path adjustment layer contains silicon oxide.

According to this configuration, it is possible to selectively etchsilicon oxide with respect to silicon nitride by, for example, dryetching using fluorine-based gas. Accordingly, it is possible for thesecond insulation film to function as an etching stopper for the opticalpath adjustment layer when patterning is carried out on the optical pathadjustment layer in a predetermined shape.

In addition, the electro-optical apparatus may have a configuration inwhich an end section of at least a portion of the optical pathadjustment layer is positioned above the embedded insulation film.

According to this configuration, it is possible for the secondinsulation film to function as an etching stopper for the optical pathadjustment layer and it is possible to increase the aperture ratio ofeach pixel while protecting the embedded insulation film when patterningis carried out on the optical path adjustment layer in a predeterminedshape.

In addition, the electro-optical apparatus may have a configuration inwhich a contact hole is formed which passes through the optical pathadjustment layer and the protective layer, and the second contactelectrode has a first contact section which is connected to thereflective electrode in a state of being embedded in the contact holeand a second contact section which is connected to the first electrodein a state of being disposed on the surface of the protective layer.

According to this configuration, it is possible to effectively connectthe reflective electrode and the first electrode via the second contactelectrode.

In addition, the electro-optical apparatus may have a configuration inwhich an end section of at least a portion of the optical pathadjustment layer is positioned on the surface of the second contactelectrode.

According to this configuration, it is possible for the second contactelectrode to function as an etching stopper for the optical pathadjustment layer and it is possible to increase the aperture ratio ofeach pixel when patterning is carried out on the optical path adjustmentlayer in a predetermined shape.

In addition, the electro-optical apparatus may have a configuration inwhich a reflection enhancing layer is disposed on the surface of thereflective electrode.

According to this configuration, it is possible to increase reflectivityusing the reflective electrode.

In addition, an electronic device according to another aspect of theinvention includes any of the electro-optical apparatuses.

According to this configuration, it is possible to accurately performoptical path adjustment between the reflective electrode and the firstelectrode, and it is possible to provide an electronic device includingthe electro-optical apparatus which is able to increase the apertureratio of the pixels.

An electro-optical apparatus according to an aspect of the inventionincludes An electro-optical apparatus having a first pixel and a secondpixel, the electro-optical apparatus comprises a substrate, a counterelectrode, a light-emitting layer disposed between the counter electrodeand the substrate, an optical path adjustment layer disposed between thelight-emitting layer and the substrate, a protective layer disposedbetween the optical path adjustment layer and the substrate, a firstreflective electrode disposed between the protective layer and thesubstrate in the first pixel, a first pixel electrode disposed betweenthe light-emitting layer and the optical path adjustment layer in thefirst pixel, a second reflective electrode disposed between theprotective layer and the substrate in the second pixel, the surface ofthe first reflective electrode and second reflective electrode beingcovered by the protective layer, a second pixel electrode disposedbetween the light-emitting layer and the optical path adjustment layerin the second pixel, an embedded insulation film. The surface of thefirst reflective electrode and second reflective electrode is covered bythe protective layer. The embedded insulation film is disposed betweenthe first reflective electrode and second reflective electrode.

In addition, the embedded insulation may be disposed between theprotective layer and at least part of the optical path adjustment layer.

In addition, an end section of at least a portion of the optical pathadjustment layer is positioned above the embedded insulation film.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a planar view illustrating a configuration of an organic ELapparatus according to an embodiment of the invention.

FIG. 2 is a circuit diagram illustrating a configuration of an elementsubstrate which the organic EL apparatus that is illustrated in FIG. 1is provided with.

FIG. 3 is a circuit diagram illustrating a configuration of a pixelcircuit which the organic EL apparatus that is illustrated in FIG. 1 isprovided with.

FIG. 4 is a planar view illustrating a configuration of a pixel whichthe organic EL apparatus that is illustrated in FIG. 1 is provided with.

FIG. 5A is a sectional view according to a first embodiment using a linesegment VA-VA which is illustrated in FIG. 4, and FIG. 5B is an enlargedsectional view of a portion of the pixel which is illustrated in FIG.5A.

FIG. 6A is a sectional view according to the first embodiment using aline segment VIA-VIA which is illustrated in FIG. 4, FIG. 6B is asectional view according to the first embodiment using a line segmentVIB-VIB which is illustrated in FIG. 4, and FIG. 6C is a sectional viewaccording to the first embodiment using a line segment VIC-VIC which isillustrated in FIG. 4.

FIG. 7A is a sectional view according to a second embodiment using theline segment VIIA-VIIA which is illustrated in FIG. 4, and FIG. 7B is anenlarged sectional view of a portion of the pixel which is illustratedin FIG. 7A.

FIG. 8A is a sectional view according to the second embodiment using theline segment VIIIA-VIIIA which is illustrated in FIG. 4, FIG. 8B is asectional view according to the second embodiment using the line segmentVIIIB-VIIIB which is illustrated in FIG. 4, and FIG. 8C is a sectionalview according to the second embodiment using the line segmentVIIIC-VIIIC which is illustrated in FIG. 4.

FIGS. 9A to 9D are sectional views for describing a manufacturingprocess for an organic EL apparatus according to the second embodiment.

FIG. 10A is a sectional view according to a third embodiment using theline segment XA-XA which is illustrated in FIG. 4, and FIG. 10B is anenlarged sectional view of a portion of the pixel which is illustratedin FIG. 10A.

FIG. 11A is a sectional view according to the third embodiment using theline segment XIA-XIA which is illustrated in FIG. 4, FIG. 11B is asectional view according to the third embodiment using the line segmentXIB-XIB which is illustrated in FIG. 4, and FIG. 11C is a sectional viewaccording to the third embodiment using the line segment XIC-XIC whichis illustrated in FIG. 4.

FIG. 12 is a schematic view illustrating an example of an electronicdevice which is provided with the organic EL apparatus that isillustrated in FIG. 1.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Embodiments of the invention will be described in detail below withreference to the drawings.

Here, the present embodiment illustrates an aspect of the invention, butis not limited to the invention, and is able to be arbitrarily modifiedwithin the scope of the technical concept of the invention. In addition,in each of the drawings described below, the scale of each layer andeach part is different from the actual size in order for the sizes ofeach layer and each part to be to the extent so as to be recognizable inthe drawings.

First Embodiment Organic EL Apparatus

An organic EL apparatus 100 shown in FIG. 1 which is a first embodimentof the invention is a self-luminous type display apparatus which isillustrated as an example of an “electro-optical apparatus” in theinvention. Here, FIG. 1 is a planar view schematically illustrating aconfiguration of the organic EL apparatus 100.

First, a summary of the organic EL apparatus 100 according to thepresent embodiment will be described with reference to FIG. 1.

As shown in FIG. 1, the organic EL apparatus 100 has an elementsubstrate 10 and a protective substrate 70. The element substrate 10 andthe protective substrate 70 are joined using an adhesive which isomitted from the drawings in a state of facing each other. Here, for theadhesive it is possible use, for example, epoxy resin, acrylic resin, orthe like.

As a light-emitting element, the element substrate 10 has a displayregion E in which a pixel 20B on which an organic EL element 30B thatemits blue (B) light is disposed, a pixel 20G on which an organic ELelement 30G that emits green (G) light is disposed, and a pixel 20R onwhich an organic EL element 30R that emits red (R) light is disposed arearranged in a matrix form.

The organic EL apparatus 100 is provided with a full color display inwhich the pixel 20B, the pixel 20G, and the pixel 20R are the displayunits. Here, in the description below, there are cases in which thepixel 20B, the pixel 20G, and the pixel 20R are treated collectively asa pixel 20, and there are cases in which the organic EL element 30B, theorganic EL element 30G, and the organic EL element 30R are treatedcollectively as an organic EL element 30.

A color filter layer 50 is provided in the display region E. Within thecolor filter layer 50 a blue color filter layer 50B is disposed on theorganic EL element 30B of the pixel 20B, a green color filter layer 50Gis disposed on the organic EL element 30G of the pixel 20G, and a redcolor filter layer 50R is disposed on the organic EL element 30R of thepixel 20R.

In the embodiment, the pixels 20 in which emitted light of each color isobtained are arranged in the Y direction (first direction), and thepixels 20 in which emitted light of different colors is obtained arearranged in the X direction (second direction) which intersects with (isorthogonal to) the Y direction. Accordingly, the disposition of thepixels 20 is a so-called stripe method. According to the arrangement ofthe pixels, the organic EL element 30B, the organic EL element 30G, andthe organic EL element 30R are each disposed in a stripe form, and theblue color filter layer 50B, the green color filter layer 50G, and thered color filter layer 50R are also disposed in a stripe form. Here, thedisposition of the pixels 20 is not limited to the stripe method, andmay be a mosaic method or a delta method.

The organic EL apparatus 100 has a top emission structure. Accordingly,light which is emitted by the organic EL element 30 passes through thecolor filter layer 50 of the element substrate 10 and is emitted asdisplay light from the protective substrate 70 side.

Since the organic EL apparatus 100 has a top emission structure, it ispossible to use an opaque ceramic substrate, a semiconductor substrate,or the like in addition to a transparent quartz substrate, a glasssubstrate, or the like as the base material of the element substrate 10.Here, in the embodiment, a silicon substrate (semiconductor substrate)is used as the element substrate 10.

A plurality of external connection terminals 103 are arranged along aside of the long side of the element substrate 10 outside the displayregion E. A data line driving circuit 101 is provided between theplurality external connection terminals 103 and the display region E. Ascanning line driving circuit 102 is provided between two sides of theshort side of the element substrate 10 and the display region E. Here,in the description below, a direction along the long side of the elementsubstrate 10 is the X direction, a direction along the short side of theelement substrate 10 is the Y direction, and a direction from theprotective substrate 70 toward the element substrate 10 is the Z(+)direction.

The protective substrate 70 is smaller than the element substrate 10,and is disposed facing the element substrate 10 such that the externalconnection terminals 103 are exposed. The external connection terminals103 are connected to a flexible wiring substrate 104. Thereby, theorganic EL apparatus 100 is able to be electrically connected to anexternal circuit (not shown in the drawings) via the flexible wiringsubstrate 104.

The protective substrate 70 is a substrate with light transmissivity,and is able to use a quartz substrate, a glass substrate, or the like.The protective substrate 70 has a role of protecting the organic ELelement 30 which is arranged in the display area E from damage, and isprovided so as to be wider than the display region E.

FIG. 2 is a circuit view illustrating a configuration of the elementsubstrate 10. As shown in FIG. 2, on the element substrate 10, m rows ofscanning lines 12 are provided extending in the X direction, and ncolumns of data lines 14 are provided extending in the Y direction. Inaddition, on the element substrate 10, a power supply line 19 isprovided extending in the Y direction in each column along the datalines 14.

Pixel circuits 110 corresponding to intersection sections of m rows ofscanning lines 12 and n columns of data lines 14 are provided on theelement substrate 10. The pixel circuits 110 form a portion of thepixels 20. m rows x n columns of the pixel circuits 110 are arranged ina matrix form in the display region E.

A reset potential for initialization Vorst is supplied (fed) to thepower supply line 19. Furthermore, although omitted from the drawings,three control lines which supply control signals Gcmp, Gel, and Gorstare provided in parallel to the scanning lines 12.

The scanning lines 12 are electrically connected to the scanning linedriving circuit 102. The data lines 14 are electrically connected to thedata line driving circuit 101. A control signal Ctrl for controlling thescanning line driving circuit 102 is supplied to the scanning linedriving circuit 102. A control signal Ctr2 for controlling the data linedriving circuit 101 is supplied to the data line driving circuit 101.

The scanning line driving circuit 102 generates scanning signals Gwr(1),Gwr(2), Gwr(3), . . . , Gwr(m−1), Gwr(m) in order to scan the scanninglines 12 over a period of a frame in each row according to the controlsignal Ctr1. Furthermore, in addition to the scanning signal Gwr, thescanning line driving circuit 102 supplies the control signals Gcmp,Gel, and Gorst to the control lines. Here, the frame period is a periodin which an image of one cut (frame) is displayed using the organic ELapparatus 100, and for example, if the frequency of a verticalsynchronization signal which includes a synchronization signal is 120Hz, one frame period is approximately 8.3 milliseconds.

The data line driving circuit 101 supplies data signals Vd(1), Vd(2), .. . , Vd(n) according to gradation data of the pixel circuit 110 to thedata lines 14 of 1, 2, . . . , n columns with respect to the pixelcircuit 110 which is positioned in a row that is selected by thescanning line driving circuit 102.

FIG. 3 is a circuit view illustrating a configuration of the pixelcircuit 110. As shown in FIG. 3, the pixel circuit 110 has P-channel MOStransistors 121, 122, 123, 124, and 125, the organic EL element 30, anda capacitor 21. The scanning signal Gwr, the control signals Gcmp, Gel,Gorst, and the like described above are supplied to the pixel circuit110.

The organic EL element 30 has a structure in which a light-emittingfunction layer (light-emitting layer) 32 is interposed by a pixelelectrode (first electrode) 31 and a counter electrode (secondelectrode) 33 which face each other.

The pixel electrode 31 is an anode which supplies a positive hole in thelight-emitting function layer 32, and is formed using a conductivematerial which has light permeability. In the embodiment, an indium tinoxide (ITO) film with a film thickness of, for example, 200 nm is formedas the pixel electrode 31. The pixel electrode 31 is electricallyconnected to a drain of the transistor 124 and one of a source or adrain of the transistor 125.

The counter electrode 33 is a cathode which supplies electrons to thelight-emitting function layer 32, and is formed using a conductivematerial which has light permeability and light reflectivity such as,for example, an alloy of magnesium (Mg) and gold (Ag). The commonelectrode 33 is a common electrode which is provided over a plurality ofpixels 20, and is electrically connected to a power supply line 8. Apotential Vct which is the lowest potential power source in the pixelcircuit 110 is supplied in the power supply line 8.

The light-emitting function layer 32 has a positive hole injectionlayer, a positive hole transport layer, an organic light-emitting layer,an electron transport layer, and the like laminated in that order fromthe pixel electrode 31 side. In the organic EL element 30, thelight-emitting function layer 32 emits light by the positive hole whichis supplied from the pixel electrode 31 and the electrons which aresupplied form the counter electrode 33 being joined in the middle of thelight-emitting function layer 32.

In addition, a power supply line 6 which intersects with each powersupply line 19 is provided on the element substrate 10 so as to extendin the X direction. Here, the power supply line 6 may be provided so asto extend in the Y direction, and may be provided so as to extend inboth the X direction and the Y direction. The transistor 121 iselectrically connected to the power supply line 6 by the source, and isrespectfully electrically connected to the other of the source or drainof the transistor 123 and the source of the transistor 124. In addition,a potential Vel which is the highest potential power source in the pixelcircuit 110 is supplied in the power supply line 6. In addition, one endof the capacitor 21 is electrically connected to the power supply line6. The transistor 121 functions as a driving transistor through whichcurrent flows according to the voltage between a gate and the source ofthe transistor 121.

The transistor 122 is electrically connected to the scanning lines 12 bythe gate, and one of the source or the drain are electrically connectedto the data lines 14. In addition, the other of the source or the drainof the transistor 122 is respectively electrically connected to the gateof the transistor 121, the other capacitor 21, and one of the source orthe drain of the transistor 123. The transistor 122 is electricallyconnected between the gate of the transistor 121 and the data lines 14,and functions as a write-in transistor which controls the electricalconnection between the gate of the transistor 121 and the data lines 14.

The transistor 123 is electrically connected to the control line by thegate, and is supplied with the control signal Gcmp. The transistor 123controls the electrical connection between the gate and the drain of thetransistor 121, and functions as a threshold compensation transistor.

The transistor 124 is electrically connected to the control line by thegate, and is supplied with the control signal Gel. The drain of thetransistor 124 is respectively electrically connected to one of thesource or the drain of the transistor 125 and the pixel electrode 31 ofthe organic EL element 30. The transistor 124 controls the electricalconnection between the drain of the transistor 121 and the pixelelectrode 31 of the organic EL element 30, and functions as alight-emission control transistor.

The transistor 125 is electrically connected to the control line by thegate, and is supplied with the control signal Gorst. In addition, theother of the source or the drain of the transistor 125 is electricallyconnected to the power supply line 19, and is supplied with the resetpotential Vorst. The transistor 125 functions as an initializationtransistor which controls the electrical connection between the powersupply line 19 and the pixel electrode 31 of the organic EL element 30.

FIG. 4 is a planar view illustrating a configuration of the pixels 20(pixels 20B, 20G, and 20R). FIG. 5A is a sectional view along the Xdirection of the pixels 20B, 20G, and 20R using a line segment VA-VAwhich is illustrated in FIG. 4. FIG. 5B is an enlarged sectional view ofa portion of the pixel 20R which is illustrated in FIG. 5A. FIG. 6A is asectional view along the Y direction of the pixel 20B using a linesegment VIA-VIA which is illustrated in FIG. 4. FIG. 6B is a sectionalview along the Y direction of the pixel 20G using a line segment VIB-VIBwhich is illustrated in FIG. 4. FIG. 6C is a sectional view along the Ydirection of the pixel 20R using a line segment VIC-VIC which isillustrated in FIG. 4.

As shown in FIGS. 4, 5A, and 5B, each of the pixels 20B, 20G, and 20Rare disposed such that a short direction is parallel to the X direction(a long direction is parallel to the Y direction) in order torespectively take a rectangular shape in planar view. In addition, thepixel separation layer 29 is provided among each of the organic ELelements 30B, 30G, and 30R.

The pixel separation layer 29 is made from an insulation layer, andelectrically insulates between the adjacent organic EL elements 30B,30G, and 30R. In the embodiment, a silicon oxide (SiO₂) film with, forexample, a film thickness of 25 nm is formed as the pixel separationlayer 29. The pixel separation layer 29 is provided so as to cover theperipheral edge section of the pixel electrode 31 of each of the pixels20B, 20G, and 20R. That is, an opening 29CT which exposes a portion ofthe pixel electrode 31 of each of the pixels 20B, 20G, and 20R isprovided in the pixel separation layer 29. The opening 29CT specifies alight-emitting region of each of the pixels 20 in order to take arectangular shape in planar view.

As shown in FIGS. 5A, 5B, and 6A to 6C, the organic EL elements 30B,30G, and 30R which are disposed respectively in the pixels 20B, 20G, and20R have a resonant structure (cavity structure) in which a reflectiveelectrode 35, a reflection enhancing layer 36, a protective layer 37, anoptical path adjustment layer 38, the first electrode 31, thelight-emitting layer 32, and the second electrode 33 are laminated on aninterlayer insulation layer (insulation layer) 34. Here, in FIGS. 4, 5A,5B, and 6A to 6C, illustration is omitted of the light-emitting functionlayer 32 and the counter electrode 33 which are described above.

In the resonant structure, it is possible to emit light by increasingthe strength of light of a specific wavelength (resonant wavelength)according to an optical distance between the reflective layer 35 and thesecond electrode 33 which is adjusted according to the optical pathadjustment layer 38 while light which is emitted by the light-emittinglayer 32 is repeatedly reflected between the reflective layer 35 and thecounter electrode 33.

For example, an insulating material such as silicon oxide (SiO₂) is usedin the interlayer insulation layer 34. Here, in FIG. 5A, although onlythe transistor 124 is indicated below the interlayer insulation layer34, other than the transistor 124, the transistors 121, 122, 123, 124,and 125, which are configured by the scanning lines 12, the data lines14, the power supply line 19, the control line, the power supply line 6,and the pixel circuit 110, the capacitor 21, and the like are disposedbelow the interlayer insulation layer 34. There is a possibility thatconcavities and convexities are formed on the surface of the interlayerinsulation layer 34 according to the transistor, a wiring, or the like,but it is preferable to flatten the surface on which the reflectiveelectrode 35 is formed.

The reflective electrode 35 is disposed by being split in each pixel 20.That is, the reflective electrode 35 is provided in each of the pixels20B, 20G, and 20R. In addition, a gap 35CT is formed between eachadjacent reflective electrode 35. Accordingly, the gap 35CT is formedbetween each adjacent reflective electrode 35, is electrically separatefrom each pixel 20, and is configured such that a different potential isappliable.

The reflective electrode 35 is made from a conductive material which haslight reflectivity, and is formed in a rectangular shape in planar view.The reflective electrode 35 is larger than the pixel electrode 31, andspecifies a reflection region for each pixel 20. In the embodiment, forexample, an alloy of aluminum (Al) and copper (Cu) (AlCu) with a filmthickness of 100 nm which is a second layer 35 b is formed on a titanium(Ti) film with a film thickness of 30 nm which is a first layer 35 a asthe reflective electrode 35.

The reflective electrode 35 is electrically connected to the drain ofthe transistor 124 which is described above via a first contactelectrode 28 (refer to FIGS. 3 and 5A) which is disposed so as to passthrough the interlayer insulation layer 34. In addition, the reflectiveelectrode 35 is electrically connected to one of the source or the drain(not shown in the drawings) of the transistor 125 via the first contactelectrode 28. For the first contact electrode 28, for example, it ispossible to use a conductive material such as tungsten (W), titanium(Ti), or titanium nitride (TiN). In the embodiment, the first layer 35 aof the reflective electrode 35 is connected to the first contactelectrode 28.

The reflection enhancing layer 36 is for increasing reflectivity usingthe reflective electrode 35, and if made from, for example, aninsulation layer which has light permeability. The reflection enhancinglayer 36 is disposed so as to cover the surface of the reflectiveelectrode 35. In the embodiment, a silicon oxide (SiO₂) film with, forexample, a film thickness of 40 nm is formed as the reflection enhancinglayer 36.

The protective layer 37 is provided so as to cover the surface of thereflective electrode 35 in which the gap 35CT is formed. The protectivelayer 37 has a first insulation film 39, and an embedded insulation film40. The first insulation film 39 is provided on the surface of thereflection enhancing layer 36, the reflective electrode 35, and theinterlayer insulation layer 34, and is formed along the gap 35CT.Accordingly, the first insulation film 39 has the concave section 39 awhich corresponds to the gap 35CT. The embedded insulation film 40 isformed so as to be embedded in the concave section 39 a. In theprotective layer 37, the surface on a side which comes into contact withthe optical path adjustment layer 38 is flattened by the embeddedinsulation film which is embedded in the concave section 37 a. In theembodiment, a silicon nitride (SiN) film with, for example, a filmthickness of 80 nm is formed as the first insulation film 39, and asilicon oxide (SiO₂) film is formed as the embedded insulation film 40.

The optical path adjustment layer 38 has insulation films 38 a and 38 bwhich are disposed on the surface of the protective layer 37. Theoptical path adjustment layer 38 performs optical path adjustment ineach pixel 20B, 20G, and 20R according to the optical distance betweenthe reflective electrode 35 and the counter electrode 33.

In detail, the film thickness of the optical path adjustment layer 38becomes larger in order of the pixel 20B, the pixel 20G, and the pixel20R. That is, as shown in FIG. 6A, in the pixel 20B, the insulationfilms 38 a and 38 b are omitted such that, for example, the resonantwavelength (peak wavelength where luminance is maximum) is 470 nm. Asshown in FIG. 6B, in the pixel 20G, the insulation film 38 a isprovided, for example, such that the resonant wavelength is 540 nm. Asshown in FIG. 6C, in the pixel 20R, the insulation films 38 a and 38 bare provided, for example, such that the resonant wavelength is 610 nm.In the embodiment, a silicon oxide (SiO₂) film with, for example, a filmthickness of 40 nm is formed as the insulation film 38 a, and a siliconoxide (SiO₂) film with, for example, a film thickness of 50 nm is formedas the insulation film 38 b. In addition, the reflection enhancing layer36 and the protective layer 37 perform optical path adjustment accordingto the optical distance between the reflective electrode 35 and thecounter electrode 33, for example, in the pixel 20B, the film thicknessof the reflection enhancing layer 36 and the protective layer 37, forexample, the resonant wavelength (peak wavelength where luminance ismaximum) is 470 nm.

Thereby, blue (B) light is emitted from the pixel 20B with a peakwavelength of 470 nm, green (G) light is emitted from the pixel 20G witha peak wavelength of 540 nm, and red (R) light is emitted from the pixel20R with a peak wavelength of 610 nm. In the organic EL apparatus 100,color purity of display light which is emitted from each pixel 20 isincreased using the organic EL element 30 which has such a resonantstructure.

The optical path adjustment layer 38 is provided among each of theorganic EL elements 30B, 30G, and 30R. In detail, the optical pathadjustment layer 38 is configured from the same type of material as theembedded insulation film 40, the optical path adjustment layer 38 isprovided so as to cover the embedded insulation film 40. According tosuch a configuration, the optical path adjustment layer 38 isprocessable according to the resonant wavelength without impairing theflatness of the surface on the pixel electrode 31 side of the protectivelayer 37. In the embodiment, the optical path adjustment layer 38 andthe embedded insulation film 40 are configured using silicon oxide(SiO₂).

As shown in FIGS. 5A, 5B, and 6A to 6C, the pixel electrode 31 isdisposed on the optical path adjustment layer 38. The pixel electrode 31is electrically connected to the reflective electrode 35 via a secondcontact electrode 41. In detail, a contact hole 41CT is provided suchthat the protective layer 37 and the reflection enhancing layer 36 passtherethrough. The contact hole 41CT is positioned below a region whichdoes not overlap with the opening 29CT in planar view, that is, a regionin which the pixel separation layer 29 is formed.

The second contact electrode 41 has a first contact section 41 a and asecond contact section 41 b. The first contact section 41 a is disposedwithin the contact hole 41CT, and is connected to the second layer 35 bof the reflective electrode 35. The second contact section 41 b isdisposed on the surface of the protective layer 37, and is connected tothe pixel electrode 31. In the embodiment, for example, a titaniumnitride (TiN) film is formed as the second contact electrode 41, and thethickness of the second contact section 41 b is formed so as to be 50nm.

As shown in FIGS. 5A, 5B, and 6A to 6C, a portion of the optical pathadjustment layer 38 is formed so as to overlap with the second contactelectrode 41. According to this configuration, it is possible to disposethe second contact electrode 41 in the vicinity of the region among eachof the organic EL elements 30B, 30G, and 30R without impairing theflatness of the surface on the pixel electrode 31 side of the protectivelayer 37. Thereby, it is possible to reduce the size of a region thatdoes not contribute to light emission, and it is possible to increasethe aperture ratio of each pixel 20.

As shown in FIG. 6A, in the pixel 20B, the insulation films 38 a and 38b which configure the optical path adjustment layer 38 are provided in aregion which overlaps with a portion of the second contact electrode 41,or the embedded insulation film 40. The insulation films 38 a and 38 bwhich configure the optical path adjustment layer 38 are not provided onthe surface of a portion of the second contact electrode 41, and thereina conductive material which configures the pixel electrode 31 islaminated on the second contact electrode 41, and the conductivematerial which configures the pixel electrode 31 comes into contact withthe second contact electrode 41.

As shown in FIG. 6B, in the pixel 20G, the insulation film 38 a whichconfigures the optical path adjustment layer 38 is provided in a regionwhich overlaps with a portion of the second contact electrode 41, or theembedded insulation film 40. Then, the contact hole is provided in theinsulation film 38 b, the conductive material which configures the pixelelectrode 31 is disposed inside the contact hole, and the pixelelectrode 31 is connected to the second contact electrode 41. In thepixel 20G, the insulation film 38 b which configures the optical pathadjustment layer 38 is provided substantially on the entire surfaceexcept for the contact hole. In more detail, the insulation film 38 awhich configures the optical path adjustment layer 38 is provided in aregion which overlaps with a portion of the second contact electrode 41,the reflective electrode 35, or the embedded insulation film 40.

As shown in FIG. 6C, in the pixel 20R, the insulation films 38 a and 38b which configure the optical path adjustment layer 38 are provided in aregion which overlaps with a portion of the second contact electrode 41,the reflective electrode 35, or the embedded insulation film 40. Then,the contact hole is provided in the insulation films 38 a and 38 b, theconductive material which configures the pixel electrode 31 is disposedwithin the contact hole, and the pixel electrode 31 is connected to thesecond contact electrode 41.

Here, although omitted from the drawings, the light-emitting functionlayer 32 and the counter electrode 33 which are described above aredisposed on the pixel electrode 31, and furthermore on top, cover thesurface of the element substrate 10, and suppress infiltration ofmoisture, oxygen, and the like in the organic EL element 30 using asealing layer (passivation film) 49, which flattens the surface of theorganic EL element 30, being disposed. The color filter layer 50 whichis described above is disposed on the surface of the sealing layer 49.

Here, the organic EL apparatus 100 of the embodiment is configured suchthat the transistor 124 and the reflective electrode 35 are electricallyconnected via the first contact electrode 28 which is described above,and the reflective electrode 35 and the pixel electrode 31 areelectrically connected via the second contact electrode 41. That is, thepixel electrode 31 is electrically connected to the transistor 124 viathe reflective electrode 35. In a case where the resistance and contactresistance of the first contact electrode 28, the reflective electrode35, the second contact electrode 41, and the pixel electrode 31 areignored, these members effectively have the same potential.

Thereby, in the organic EL apparatus 100 of the embodiment, in a casewhere the power supply line (reflective electrode) and the firstelectrode (pixel electrode) in the related art which is described aboveare shorted, it is possible to achieve a further improvement in yieldsince it is possible to avoid a problem of the potential of the powersupply line being applied to the first electrode without change.

That is, in the organic EL apparatus 100 of the embodiment, a case wherea portion of such a power supply line of the related art configures thereflective electrode, and a case where the power supply line and thereflective electrode are electrically connected are different, and thereflective electrode 35 and the pixel electrode 31 have the samepotential due to the reflective electrode 35 and the pixel electrode 31being electrically connected. Thereby, it is possible to avoid a shortbetween the power supply line and the pixel electrode, which isgenerated by a defect or the like in the insulation layer between thereflective electrode 35 and the pixel electrode 31 (the reflectionenhancing layer 36, the protective layer 37, the optical path adjustmentlayer 38, and the like).

In addition, in the organic EL apparatus 100 of the embodiment, usingsuch a configuration, it is possible to perform the light-emittingoperation of the organic EL element 30 with high reliability whilecontrolling the potential which is applied from the transistor 124 tothe pixel electrode 31 via the reflective electrode 35.

In addition, in the organic EL apparatus 100 of the embodiment, it ispossible to perform the light-emitting operation of the organic ELelement 30 with good color reproducibility due to the resonant structurewhich is described above since it is possible to easily perform opticalpath adjustment between the reflective electrode 35 and the pixelelectrode 31 using the optical path adjustment layer 38 while protectingthe reflective electrode 35 using the protective layer 37 which isdescribed above.

Furthermore, in the organic EL apparatus 100 of the embodiment, sincethe surface of the protective layer 37 which is described above on theside which comes in contact with the optical path adjustment layer 38 isflattened, it is possible to accurately perform optical path adjustmentbetween the reflective electrode 35 and the pixel electrode 31 using theoptical path adjustment layer 38 in each pixel 20. Thereby, it ispossible to perform the light-emitting operation for the organic ELelement 30 with good color reproducibility using the resonant structurewhich is described above.

In addition, in the organic EL apparatus 100 of the embodiment, it ispossible to protect the embedded insulation film 40 when patterning iscarried out on the optical path adjustment layer 38 in a predeterminedshape by the optical path adjustment layer 38 which is described abovecovering the surface of the embedded insulation film 40.

Here, the same type of material is used in the optical path adjustmentlayer 38 (insulation films 38 a and 38 b) and the embedded insulationfilm 48, and different materials from the optical path adjustment layer38 and the embedded insulation film 48 are used in the first insulationfilm 39. In the embodiment, silicon oxide (SiO₂) is used in the opticalpath adjustment layer 38 (insulation films 38 a and 38 b) and theembedded insulation film 48, and silicon nitride (SiN) with an etchingrate lower than the silicon oxide (SiO₂) is used in the first insulationfilm 39.

In this case, it is possible to selectively etch silicon oxide withrespect to silicon nitride by, for example, dry etching usingfluorine-based gas. Then, an end section of a portion of at least one ofthe optical path adjustment layer 38 (insulation films 38 a and 38 b) isdisposed so as to be positioned on the surface of the first insulationfilm 39. Thereby, it is possible for the first insulation film 39 tofunction as an etching stopper for the optical path adjustment layer 38.

In addition, in the organic EL apparatus 100 of the embodiment, thecontact electrode 41 which is described above has the first contactsection 41 a which is connected to the reflective electrode 35 in astate of being embedded in the contact hole 41CT, and the second contactsection 41 b which is connected to the pixel electrode 31 in a state ofcovering the surface of the optical path adjustment layer 38. In thiscase, it is possible to effectively connect the reflective electrode 35and the pixel electrode 31 via the second contact electrode 41.

Furthermore, in the organic EL apparatus 100 of the embodiment, thesecond contact section 41 b functions as an etching stopper for theoptical path adjustment layer 38, and it is possible to increase theaperture ratio of each pixel 20 when patterning is carried out on theoptical path adjustment layer 38 in a predetermined shape by an endsection of at least a portion of the optical path adjustment layer 38which is described above being positioned on the surface of the secondcontact section 41 b.

Second Embodiment Organic EL Apparatus

Next, an organic EL apparatus 100A which is illustrated in FIGS. 7A to8C as a second embodiment of the invention will be described. Here, inthe description below, the parts which are the same as the organic ELapparatus 100 described above will be omitted from the description andgiven the same reference numerals in the drawings.

FIG. 7A is a sectional view along the X direction of the pixels 20B,20G, and 20R using a line segment VIIA-VIIA which is illustrated in FIG.4. FIG. 7B is an enlarged sectional view of a portion of the pixel 20Rwhich is illustrated in FIG. 7A. FIG. 8A is a sectional view along the Ydirection of the pixel 20B using a line segment VIIIA-VIIIA which isillustrated in FIG. 4. FIG. 8B is a sectional view along the Y directionof the pixel 20G using a line segment VIIIB-VIIIB which is illustratedin FIG. 4. FIG. 8C is a sectional view along the Y direction of thepixel 20R using a line segment VIIIC-VIIIC which is illustrated in FIG.4.

As shown in FIGS. 7A, 7B, and 8A to 8C, an organic EL apparatus 100Aaccording to the second embodiment is different from the organic ELapparatus 100 according to the embodiment described above in the pointof being provided with a second insulation film 42.

As shown in FIGS. 4, 7A, and 7B, each of the pixels 20B, 20G, and 20Rare disposed such that a short direction is parallel to the X direction(a long direction is parallel to the Y direction) in order torespectively take a rectangular shape in planar view. In addition, thepixel separation layer 29 is provided among each of the organic ELelements 30B, 30G, and 30R.

The protective layer 37 is provided so as to cover the surface of thereflective electrode 35 on which the gap 35CT is formed. In addition tothe first insulation film 39 and the embedded insulation film 40, theprotective layer 37 is provided with the second insulation film 42. Thesecond insulation film 42 is provided between the second contact section41 b and the first insulation film 39.

The first insulation film 39 is provided on the surface of thereflection enhancing layer 36, the reflective electrode 35, and theinterlayer insulation layer 34, and is formed along the gap 35CT.Accordingly, the first insulation film 39 has the concave section 39 awhich corresponds to the gap 35CT. The embedded insulation film 40 isformed so as to be embedded in the concave section 39 a.

In addition, the second insulation film 42 is patterned in the sameshape as the second contact section 41 b. That is, the second insulationfilm 42 is disposed between the first insulation film 39 and the secondcontact section 41 b, and has a shape which matches the second contactsection 41 b in planar view.

In the embodiment, a silicon nitride (SiN) film with, for example, afilm thickness of 80 nm is formed as the first insulation film 39, asilicon oxide (SiO₂) film is formed as the embedded insulation film 40,and a silicon oxide (SiO₂) film with, for example, a film thickness of50 nm is formed as the second insulation film 42.

Here, although omitted from the drawings, in the same manner as thefirst embodiment, the light-emitting function layer 32 and the counterelectrode 33 which are described above are disposed on the pixelelectrode 31, and furthermore on top, cover the surface of the elementsubstrate 10, and suppress infiltration of moisture, oxygen, and thelike in the organic EL element 30 by disposing a sealing layer(passivation film) 49, which flattens the surface of the organic ELelement 30. The color filter layer 50 which is described above isdisposed on the surface of the sealing layer 49.

Here, in the organic EL apparatus 100A of the embodiment, it is possiblefor the first insulation film 39 to function as an etching stopper forthe second insulation film 42 when patterning is carried out on thesecond contact electrode 41 which is described above in a predeterminedshape. Thereby, even in a case where patterning is carried out on thesecond insulation film 42 with the same shape as the second contactsection 41 b, it is possible to prevent generation of variation in thethickness of the first insulation film 39 which is below the secondinsulation film 42.

Organic EL Apparatus Manufacturing Method

In detail, a manufacturing method of the organic EL apparatus 100A ofthe second embodiment will be described with reference to FIGS. 9A to9D. Here, FIGS. 9A to 9D are sectional views for describing amanufacturing process of the protective layer 37 and the second contactelectrode 41 with respect to the configuration of the organic ELapparatus 100A described above.

As shown in FIG. 9A, in the embodiment, first, the first insulation film39 which covers the surface of the reflection enhancing layer 36 isformed as the protective layer 37 on the reflective electrode 35, theembedded insulation film 40 is formed which is embedded in the concavesection 39 a, then the second insulation film 42 is formed which coversthe surface of the first insulation film 39 that is flattened by theembedded insulation film 40. Here, in the embodiment, as describedabove, a silicon nitride (SiN) film with, for example, a film thicknessof 80 nm is formed as the first insulation film 39, a silicon oxide(SiO₂) film is formed as the embedded insulation film 40, and a siliconoxide (SiO₂) film with, for example, a film thickness of 50 nm is formedas the second insulation film 42.

Next, as shown in FIG. 9B, the contact hole 41CT is formed which thereflection enhancing layer 36, the first insulation film 39, and thesecond insulation film 42 pass through, then a conductive film 41EL isformed which covers the surface of the second insulation film 42 in astate of being embedded in the contact hole 41CT. Here, in theembodiment, as described above, a titanium nitride (TiN) layer with athickness of 50 nm is formed as the conductive film 41EL.

Next, as shown in FIG. 9C, a resist is coated on the surface of theconductive film 41EL, then a mask layer 43 is formed in a shape whichcorresponds to the second contact section 41 b using a photolithographytechnique. After that, the conductive film 41EL and the secondinsulation film 42 are etched until the surface of the first insulationfilm 39 is exposed.

At this time, it is possible to selectively carry out etching on thesecond insulation film (silicon oxide film) 42 which has a lower etchingrate than the first insulation film 39 with respect to the firstinsulation film (silicon nitride film) 39 by dry etching usingfluorine-based gas. Accordingly, in the embodiment, it is possible forthe first insulation film 39 to function as an etching stopper for thesecond insulation film 42 by increasing the etching selection ratio ofthe first insulation film 39 and the second insulation film 42 (theetching rate of the second insulation film 42/the etching rate of thefirst insulation film 39).

Next, as shown in FIG. 9D, the mask layer 43 is removed. Thereby, thesecond contact electrode 41 is formed which has the first contactsection 41 a which is connected to the reflective electrode 35 in astate of being embedded in the contact hole 41CT, and the second contactsection 41 b which is connected to the pixel electrode 31 in a state ofbeing disposed on the surface of the second insulation film 42.

As described above, in the organic EL apparatus 100 of the secondembodiment, even in a case where patterning is carried out on the secondinsulation film 42 which is described above with the same shape as thesecond contact section 41 b, it is possible to prevent generation ofvariation in the thickness of the first insulation film 39 which isbelow the second insulation film 42. Accordingly, in the organic ELapparatus 100A, it is possible to perform the light-emitting operationof the organic EL element 30 with good color reproducibility due to theresonant structure since it is possible to easily perform optical pathadjustment between the reflective electrode 35 and the pixel electrode31 by adjusting the thickness of the optical path adjustment layer 38which is disposed on the surface of the protective layer 37.

Third Embodiment Organic EL Apparatus

Next, an organic EL apparatus 100B which is illustrated in FIGS. 10 and11 will be described as a third embodiment of the invention. Here, inthe description below, the parts which are the same as the organic ELapparatuses 100 and 100A described above will be omitted from thedescription and given the same reference numerals in the drawings.

FIG. 10A is a sectional view along the X direction of the pixels 20B,20G, and 20R using a line segment XA-XA which is illustrated in FIG. 4.FIG. 10B is an enlarged sectional view of a portion of the pixel 20Rwhich is illustrated in FIG. 10A. FIG. 11A is a sectional view along theY direction of the pixel 20B using a line segment XIA-XIA which isillustrated in FIG. 4. FIG. 11B is a sectional view along the Ydirection of the pixel 20G using a line segment XIB-XIB which isillustrated in FIG. 4. FIG. 11C is a sectional view along the Ydirection of the pixel 20R using a line segment XIC-XIC which isillustrated in FIG. 4.

As shown in FIGS. 10A, 10B, and 11A to 11C, an organic EL apparatus 100Baccording to the third embodiment is different from the organic ELapparatus 100A according to the second embodiment described above in thepoint of being provided with a third insulation film 44. In addition,the disposition of the optical path adjustment layer 38 is differentfrom in the organic EL apparatus 100 according to the first embodiment,and the organic EL apparatus 100A according to the second embodiment.

As shown in FIGS. 4, 10A, and 10B, each of the pixels 20B, 20G, and 20Rare disposed such that a short direction is parallel to the X direction(a long direction is parallel to the Y direction) in order torespectively take a rectangular shape in planar view. In addition, thepixel separation layer 29 is provided among each of the organic ELelements 30B, 30G, and 30R.

The protective layer 37 is provided so as to cover the surface of thereflective electrode 35 on which the gap 35CT is formed. The protectivelayer 37 is provided with the first insulation film 39, the embeddedinsulation film 40, the second insulation film 42, and the thirdinsulation film 44.

The first insulation film 39 is provided on the surface of thereflection enhancing layer 36, the reflective electrode 35, and theinterlayer insulation layer 34, and is formed along the gap 35CT.Accordingly, the first insulation film 39 has the concave section 39 awhich corresponds to the gap 35CT. The embedded insulation film 40 isformed so as to be embedded in the concave section 39 a.

In addition, the second insulation film 42 is provided between thesecond contact section 41 b and the third insulation film 44, and ispatterned in the same shape as the second contact section 41 b. That is,the second insulation film 42 is disposed between the first insulationfilm 39 and the second contact section 41 b, and has a shape whichmatches the second contact section 41 b in planar view.

The third insulation film 44 is formed so as to cover the surface whichis flattened by the embedded insulation film 40 of the first insulationfilm 39. In the protective layer 37, the surface on a side which comesinto contact with the optical path adjustment layer 38 is flattened bythe third insulation film 44. In the embodiment, a silicon nitride (SiN)film with, for example, a film thickness of 80 nm is formed as the firstinsulation film 39, a silicon oxide (SiO₂) film is formed as theembedded insulation film 40, a silicon oxide (SiO₂) film with, forexample, a film thickness of 50 nm is formed as the second insulationfilm 42, and a silicon nitride (SiN) film with, for example, a filmthickness of 80 nm is formed as the third insulation film 44.

The end section of the optical path adjustment layer 38 (insulatingfilms 38 a and 38 b) is positioned on the embedded insulation film 40.The third insulation film 44 is provided between the end section of theoptical path adjustment layer 38 and the embedded insulation film 40.The embedded insulation film 40 and the optical path adjustment layer 38are configured by the same type of material, and are configured of amaterial which is different from the third insulation film 44. In theembodiment, the embedded insulation film 40 and the optical pathadjustment layer 38 are silicon oxide (SiO₂), and the second insulationfilm 42 is a silicon nitride (SiN) film. Accordingly, it is possible toform the optical path adjustment layer 38 with film thicknesses whichare different for each pixel 20 without impairing smoothness of thesurface of the protective layer 37.

In the pixel 20B the reflection enhancing layer 36, the first insulationfilm 39, and the third insulation film 44 are provided between thereflective electrode 35 and the pixel electrode 31 such that, forexample, the resonant wavelength (peak wavelength where luminance ismaximum) is 470 nm. In the pixel 20G, the reflection enhancing layer 36,the first insulation film 39, the third insulation film 44, and theinsulation film 38 a are provided between the reflective electrode 35and the pixel electrode 31 such that, for example, the resonantwavelength is 540 nm. In the pixel 20R, the reflection enhancing layer36, the first insulation film 39, the third insulation film 44, theinsulation film 38 a, and the insulation film 38 b are provided betweenthe reflective electrode 35 and the pixel electrode 31 such that, forexample, the resonant wavelength is 610 nm.

Then, the end sections of the optical path adjustment layer 38(insulation films 38 a and 38 b) are positioned between the pixel 20Rand the pixel 20G, between the pixel 20G and the pixel 20B, and betweenthe pixel 20B and the pixel 20R. In the embodiment, as in FIG. 1, theend sections of the optical path adjustment layer 38 are provided in astripe form which extends in the Y direction since the pixels 20 aredisposed using a stripe method. As shown in FIGS. 10A and 10B, the endsections of the optical path adjustment layer 38 are positioned abovethe embedded insulation film 40 in the gap 35CT of the adjacentreflective electrode 35 in the X direction.

As shown in FIGS. 10A and 11A, in the pixel 20B, the insulation films 38a and 38 b which configure the optical path adjustment layer 38 are notdisposed across substantially the entire surface. Accordingly, theconductive material which configures the pixel electrode 31 is disposedon the surface of the second contact electrode 41, and the conductivematerial which configures the pixel electrode 31 comes into contact withthe second contact electrode 41.

In this manner, the insulation film which configures the pixel electrode31 is formed on the second contact electrode 41 and on the thirdinsulation film 44. A portion of the pixel separation layer 29 islaminated on the third insulation film 44. In FIGS. 6A and 8A, theinsulation films 38 a and 38 b are provided between the adjacent pixelsB, but as shown in FIG. 10A, in the embodiment, the optical pathadjustment layer 38 is not necessary between the adjacent pixels B.Accordingly, in the organic EL apparatus 100B of the third embodiment,it is possible to form the light-emitting function layer 32, the counterelectrode 33, the color filter layer 50B, and the like on a flattersurface.

As shown in FIGS. 10A and 11B, in the pixel 20G, the insulation film 38a which configures the optical path adjustment layer 38 is not disposedacross substantially the entire surface. Then, the contact hole isprovided in the insulation film 38 b, the conductive material whichconfigures the pixel electrode 31 is disposed inside the contact hole,and the pixel electrode 31 is connected to the second contact electrode41.

In the pixel 20G, the insulation film 38 b which configures the opticalpath adjustment layer 38 is provided substantially on the entire surfaceexcept for the contact hole. In more detail, the insulation film 38 bwhich configures the optical path adjustment layer 38 is provided so asto overlap with a portion of the second contact electrode 41, and isformed on the third insulation film 44 above the reflective electrode 35and the embedded insulation film 40. In FIGS. 6B and 8B, the insulationfilm 38 a is not provided between adjacent pixels G, but as shown inFIG. 10A, in the embodiment, the insulation film 38 a is not necessarybetween the adjacent pixels G. Accordingly, in the organic EL apparatus100B of the third embodiment, it is possible to form the light-emittingfunction layer 32, the counter electrode 33, the color filter layer 50G,and the like on a flatter surface.

As shown in FIGS. 10A, 10B, and 11C, in the pixel 20R, the contact holeis provided in the insulation films 38 a and 38 b, the conductivematerial which configures the pixel electrode 31 is disposed within thecontact hole, and the pixel electrode 31 is connected to the secondcontact electrode 41. In the pixel 20R, the insulation films 38 a and 38b which configure the optical path adjustment layer 38 are providedsubstantially on the entire surface except for the contact hole. In moredetail, the insulation films 38 a and 38 b which configure the opticalpath adjustment layer 38 are provided so as to overlap with a portion ofthe second contact electrode 41, and are laminated on the thirdinsulation film 44 above the reflective electrode 35 and the embeddedinsulation film 40.

Here, although omitted from the drawings, the light-emitting functionlayer 32 and the counter electrode 33 which are described above aredisposed on the pixel electrode 31, and furthermore on top, cover theupper surface of the element substrate 10, and suppress infiltration ofmoisture, oxygen, and the like in the organic EL element 30 by disposinga sealing layer (passivation film) 49, which flattens the surface of theorganic EL element 30. The color filter layer 50 which is describedabove is disposed on the surface of the sealing layer 49.

Here, in the organic EL apparatus 100B of the third embodiment, sincethe surface of the protective layer 37 which is described above on theside which comes in contact with the optical path adjustment layer 38 isflattened, it is possible to accurately perform optical path adjustmentbetween the reflective electrode 35 and the pixel electrode 31 byadjusting the thickness of the optical path adjustment layer 38 in eachpixel 20. Thereby, it is possible to perform the light-emittingoperation for the organic EL element 30 with good color reproducibilityusing the resonant structure which is described above.

In addition, in the organic EL apparatus 100B of the third embodiment,the end section of the pixel electrode 31 which is disposed on thesurface of the optical path adjustment layer 38 is disposable close tothe concave section 39 a since the optical path adjustment layer 38,which is disposed on the surface of the protective layer 37 which isdescribed above, is also flattened. Thereby, it is possible to increasethe aperture ratio of the pixels 20, that is, the aperture area(light-emitting area) of the opening 29CT which specifies thelight-emitting area of the pixels 20 which is described above.

In addition, in the organic EL apparatus 100B of the third embodiment,an end section of a portion of at least one of the optical pathadjustment layer 38 (insulation films 38 a and 38 b) is disposed so asto be positioned on the surface of the third insulation film 44 which isdescribed above. Meanwhile, silicon oxide (SiO₂) is used in the opticalpath adjustment layer 38 (insulation films 38 a and 38 b) and theembedded insulation film 48, and a silicon nitride (SiN) film with anetching rate lower than the silicon oxide (SiO₂) is used in the secondinsulation film 42.

In this case, it is possible to selectively etch silicon oxide withrespect to silicon nitride by, for example, dry etching usingfluorine-based gas. Accordingly, it is possible for the secondinsulation film 42 to function as an etching stopper for the opticalpath adjustment layer 38 while protecting the embedded insulation film40 when patterning is carried out on the optical path adjustment layer38 in a predetermined shape.

In the embodiment described above, as shown in FIGS. 5A and 5B, or 7Aand 7B, the optical path adjustment layer 38 reaches from a region whichoverlaps with the reflective electrode 35 of the organic EL element 30Rto a region which overlaps with the embedded insulation film 40 or thegap 35CT of the reflective electrode 35, and furthermore, a region whichoverlaps with the reflective electrode 35 of the adjacent organic ELelement 30B. In contrast to this, as shown in FIGS. 10A and 10B, sincethe organic EL apparatus 100B of the third embodiment has the thirdinsulation film 44, the optical path adjustment layer 38 is disposableso as to reach from the region which overlaps with the reflectiveelectrode 35 of the organic EL element 30R to the region which overlapswith a portion of the embedded insulation film 40 without overlappingwith the reflective electrode 35 of the adjacent organic EL element 30B.Consequently, the region which overlaps with the optical path adjustmentlayer 38 and the reflective electrode 35 of the organic EL element 30Bis not necessary. Here, between the pixel 20B and the pixel 20R isdescribed, but between the pixel 20R and the pixel 20G, and between thepixel 20G and the pixel 20B are also the same. Accordingly, it ispossible to reduce the size of a region that does not contribute tolight emission, and it is possible to increase the aperture ratio ofeach pixel 20.

Electronic Device

FIG. 12 is a schematic view illustrating a head-mounted display 1000 asan example of an electronic device which is provided with the organic ELapparatus 100.

As shown in FIG. 12, the head-mounted display 1000 has two displaysections 1001 which are provided to correspond to left and right eyes.An observer M is able to see characters, images, and the like which aredisplayed on the display sections 1001 by mounting the head-mounteddisplay 1000 on their head as glasses. For example, if an image isdisplayed taking a parallax in the left and right display sections 1001,it is also possible to enjoy viewing three-dimensional moving images.

The organic EL apparatus 100 is used in the display sections 1001. Inthe organic EL apparatus 100, it is possible to increase operationreliability of the organic EL element 30 described above, and it ispossible to achieve a further improvement in yield. Accordingly, it ispossible to suppress generation of point defects and provide thehead-mounted display 1000 with a high-quality display by mounting theorganic EL apparatus 100 in the display sections 1001.

Here, the invention is not necessarily limited to the embodimentsdescribed above, and it is possible to add various modifications withoutdeviating from the gist of the invention.

In detail, the electro-optical apparatus to which the invention isapplied is not limited to the organic EL apparatus which is providedwith the organic EL element as the light-emitting element which isdescribed above, and it is possible to widely apply the invention to,for example, an electro-optical apparatus which is provided with aself-luminous light-emitting element such as an inorganic EL element oran LED.

In addition, the electronic device to which the present invention isapplied is not limited to the head-mounted display which is describedabove, and it is possible, for example, to give the example of anelectronic device which uses the electro-optical apparatus to which theinvention is applied in a head-up display, an electronic viewfinder of adigital camera, a portable information terminal, and a display sectionsuch as a navigator.

The entire disclosure of Japanese Patent Application No. 2014-262962,filed Dec. 25, 2014 is expressly incorporated by reference herein.

What is claimed is:
 1. An electro-optical apparatus comprising: an element substrate that includes a display region in which a plurality of pixels are arranged in a matrix form, wherein the element substrate has a light-emitting element and a transistor which drives the light-emitting element in each pixel, wherein the light-emitting element is disposed via an insulation layer above the transistor, and has a structure in which a reflective electrode, a protective layer, an optical path adjustment layer, a first electrode, a light-emitting layer, and a second electrode are laminated, wherein the reflective electrode is disposed by being split in each pixel, wherein a gap is formed between each reflective electrode that is disposed by being split in each pixel, and wherein the protective layer covers the surface on which the reflective electrode is disposed, and includes an embedded insulation film which is embedded in the gap.
 2. The electro-optical apparatus according to claim 1, wherein the transistor and the reflective electrode are electrically connected via a first contact electrode which is disposed so as to pass through the insulation layer, and the reflective electrode and the first electrode are electrically connected via a second contact electrode which is disposed so as to pass through the protective layer.
 3. The electro-optical apparatus according to claim 2, the protective layer further comprising: a first insulation film which is provided between the reflective electrode and an embedded insulation film; and a second insulation film which is provided on the first insulation film and the embedded insulation film, wherein the optical path adjustment layer is disposed such that an end section of at least a portion is positioned on the surface of the second insulation film.
 4. The electro-optical apparatus according to claim 3, wherein the second insulation film contains silicon nitride, and the optical path adjustment layer contains silicon oxide.
 5. The electro-optical apparatus according to claim 3, wherein an end section of at least a portion of the optical path adjustment layer is positioned above the embedded insulation film.
 6. The electro-optical apparatus according to claim 1, wherein a contact hole is formed which passes through the optical path adjustment layer and the protective layer, and the second contact electrode has a first contact section which is connected to the reflective electrode in a state of being embedded in the contact hole, and a second contact section which is connected to the first electrode in a state of being disposed on the surface of the protective layer.
 7. The electro-optical apparatus according to claim 6, wherein an end section of at least a portion of the optical path adjustment layer is positioned on the surface of the second contact section.
 8. The electro-optical apparatus according to claim 1, wherein a reflection enhancing layer is disposed on the surface of the reflective electrode.
 9. An electro-optical apparatus having a first pixel and a second pixel, the electro-optical apparatus comprising: a substrate; a counter electrode; a light-emitting layer disposed between the counter electrode and the substrate; an optical path adjustment layer disposed between the light-emitting layer and the substrate; a protective layer disposed between the optical path adjustment layer and the substrate; a first reflective electrode disposed between the protective layer and the substrate in the first pixel; a first pixel electrode disposed between the light-emitting layer and the optical path adjustment layer in the first pixel; a second reflective electrode disposed between the protective layer and the substrate in the second pixel, the surface of the first reflective electrode and second reflective electrode being covered by the protective layer; a second pixel electrode disposed between the light-emitting layer and the optical path adjustment layer in the second pixel; an embedded insulation film disposed between the first reflective electrode and second reflective electrode.
 10. The electro-optical apparatus according to claim 9, wherein the embedded insulation is disposed between the protective layer and at least part of the optical path adjustment layer.
 11. The electro-optical apparatus according to claim 9, wherein an end section of at least a portion of the optical path adjustment layer is positioned above the embedded insulation film.
 12. An electronic device comprising: electro-optical apparatus according to claim
 1. 13. An electronic device comprising: electro-optical apparatus according to claim
 2. 14. An electronic device comprising: electro-optical apparatus according to claim
 3. 15. An electronic device comprising: electro-optical apparatus according to claim
 4. 16. An electronic device comprising: electro-optical apparatus according to claim
 5. 17. An electronic device comprising: electro-optical apparatus according to claim
 6. 18. An electronic device comprising: electro-optical apparatus according to claim
 9. 19. An electronic device comprising: electro-optical apparatus according to claim
 10. 20. An electronic device comprising: electro-optical apparatus according to claim
 11. 